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CONDUCTION MECHANISMS OF TUNGSTEN DISELENIDE BASED SCHOTTKY DIODES

Fabrication and electrical characterization of Schottky contacts using WSe2 semiconducting crystals

Erschienen am 19.01.2011, Auflage: 1/2011
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ISBN/EAN: 9783843393522
Sprache: Englisch
Umfang: 208 S.
Format (T/L/B): 1.3 x 22 x 15 cm
Einband: kartoniertes Buch

Beschreibung

The book is a study of physical and electrical behaviour of fabricated p-type WSe2 based Schottky diodes coated with different metals and of different thickness.The book opens with a brief narration on the importance of Schottky barrier diodes alongwith a discussion on transitional metal dichalcogenides with specific emphasis to WSe2. The theoretical aspects of Schottky barriers, the growth technique of WSe2 crystals, its structural and compositional characterizations, determination of type and carrier concentrations, method of fabrication of Schottky diodes etc are provided for background information.The detailed analysis of the electrical characterization of these WSe2 diodes is the main theme of the book. The book winds up wth the summary of the results obtained,the conclusions arrived at and a concise discussion on the prospective work.

Autorenportrait

Author did her Ph.D. from Sardar Patel University, Gujarat, India. She is the recipient of the prestigious ''Swarna Jayanti Puruskar- 2003'' for the best research paper by the National Academy of Sciences, India. Currently she is working as Scientist at Indian School of Mines Dhanbad under the Women Scientist Scheme of DST, India.